NVMFS6B03N Description
NVMFS6B03N Power MOSFET 100 V, 4.8 mW, 145 A, Single N−Channel.
NVMFS6B03N Key Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFS6B03NWF
- Wettable Flank Option for Enhanced Optical
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant