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SBE818 Description

ENA1379A SBE818 Schottky Barrier Diode 30V, 2A, Low IR, Non-Monolithic Dual EMH8 mon Cathode http://onsemi. Applications High frequency rectification (switching regulators, converters, choppers).

SBE818 Key Features

  • posite type device with 2 low IR SBD shoused in one package, facilitating high density mounting
  • Small switching noise
  • Low forward voltage (IF=2.0A, VF max=0.62V)
  • Low reverse current (VR=15V, IR max=7.5μA)
  • Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm)