Datasheet4U Logo Datasheet4U.com

OP801SL - NPN Silicon Phototransistors

This page provides the datasheet information for the OP801SL, a member of the OP800SL NPN Silicon Phototransistors family.

📥 Download Datasheet

Datasheet preview – OP801SL

Datasheet Details

Part number OP801SL
Manufacturer OPTEK Technologies
File Size 306.61 KB
Description NPN Silicon Phototransistors
Datasheet download datasheet OP801SL Datasheet
Additional preview pages of the OP801SL datasheet.
Other Datasheets by OPTEK Technologies

Full PDF Text Transcription

Click to expand full text
Types OP800SL thru OP805SL Electrical Characteristics (TA= 25' C unless otherwise noted) SYMBOL PARAMETER I I c ( o ~ ) On-State Collector Current MIN TYP MAX UNITS OP800SL 0.5 OP801SL 0.5 1 3.0 mA mA TEST CONDITIONS ICEO Collector Dark Current V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO Collector-Base Breakdown Voltage I V(BR)ECO Emitter-Collector Breakdown Voltage 1 V(BR)EBO Emitter-Base Breakdown Voltage 1 VCE(SAT) Collector-Emitter Saturation Voltage I 1tr Rise Time tf Fall Time 30 30 5.0 5.0 100 nA V C E = I O V , E ~ = O V. l c = 1 0 0 p A V lc=100pA V I~=100pA I V I~=100pA I I0.40 V Ic = 0.4 mA, Ee= 5 m ~ / c m ~ ( ~ ) ps Vcc = 5 V, Ic = 0.80 mA, ps RL = I 0 0 R, See Test Circuit Typical Performance Curves Collector Dark Current vs.
Published: |