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OPE5587 - High Speed GaAlAs Infrared Emitter

Features

  • Ultra high-speed : 25ns rise time.
  • 880nm wavelength.
  • Narrow beam angle.
  • Low forward voltage.
  • High power and high reliability.
  • Available for pulse operating.

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Datasheet preview – OPE5587

Datasheet Details

Part number OPE5587
Manufacturer OPTEK Technologies
File Size 222.07 KB
Description High Speed GaAlAs Infrared Emitter
Datasheet download datasheet OPE5587 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com High Speed GaAlAs Infrared Emitter C C The OPE5587 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 package and has narrow beam angle with lensed package and cup frame. Especially this device is suited as the emitter of data transmission without cable.
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