OPTO DIODE AXUV63HS1
PHOTODIODE
| Part No. | AXUV63HS1 |
|---|---|
| Datasheet | AXUV63HS1 Download |
| Manufacturer | OPTO DIODE |
| Description | PHOTODIODE |
| Buy | Stock & Price |
FEATURES
● Circular active area● Ideal for electron detection
● 100% internal QE
● High speed Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area 9mm Responsivity, R (see graphs on next page) Reverse Breakdown Voltage, VR IR = 1μA Capacitance, C Rise Time VR = 0V RL = 50Ω, VR = 2V Dark Current VR = 150V MIN 160 TYP 63 MAX 10 2 100 THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient1 Nitrogen or Vacuum Maximum Junction Temperature Lead soldering temperature2 -10° TO 40°C1 -20°C TO 80°C 70°C 260°C 1Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised. 20.080" from case for 10 seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior
