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PHOTODIODE Ø9mm
AXUV63HS1
FEATURES • Circular active area • Ideal for electron detection • 100% internal QE • High speed
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Active Area
9mm
Responsivity, R
(see graphs on next page)
Reverse Breakdown Voltage, VR
IR = 1μA
Capacitance, C Rise Time
VR = 0V RL = 50Ω, VR = 2V
Dark Current
VR = 150V
MIN 160
TYP 63
MAX
10 2 100
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE Ambient1
Nitrogen or Vacuum
Maximum Junction Temperature Lead soldering temperature2
-10° TO 40°C1 -20°C TO 80°C
70°C 260°C
1Temperatures exceeding these parameters may create oxide growth on the active area.
AXUV63HS1 Datasheet
