AXUV63HS1
AXUV63HS1 is PHOTODIODE manufactured by OPTO DIODE.
FEATURES
- Circular active area
- Ideal for electron detection
- 100% internal QE
- High speed
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Active Area
9mm
Responsivity, R
(see graphs on next page)
Reverse Breakdown Voltage, VR
IR = 1μA
Capacitance, C Rise Time
VR = 0V RL = 50Ω, VR = 2V
Dark Current
VR = 150V
MIN 160
TYP 63
10 2 100
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE Ambient1
Nitrogen or Vacuum
Maximum Junction Temperature Lead soldering temperature2
-10° TO 40°C1 -20°C TO 80°C
70°C 260°C
1Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150nm will be promised. 20.080" from case for 10 seconds.
Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors”...
