OPTO DIODE OD-100
SUPER HIGH-POWER GaAlAs IR EMITTERS
| Part No. | OD-100 |
|---|---|
| Datasheet | OD-100 Download |
| Manufacturer | OPTO DIODE |
| Description | SUPER HIGH-POWER GaAlAs IR EMITTERS |
| Buy | Stock & Price |
FEATURES
ANODE (CASE) .357 .362 .100●
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● Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches .031 .014 .018 .500 CATHODE .040 45* ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA IF = 50mA MB E MIN 80 TYP 100 1300 60 80 110 1.65 5 30 90 0.7 0.7 880 1000 mW 500mA 10A 5V 260°C -55°C to 100°C 100°C 145°C/W Typical 75°C/W Typical R MAX UNITS mW mW/sr nm nm Deg 2 Volts Volts pF μsec μsec 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: RoHS