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SUPER HIGH-POWER GaAlAs IR EMITTERS
.130 MAX EPOXY .039 .048 .018
OD-100
FEATURES
ANODE (CASE)
.357 .362 .100
• • • • •
Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches
.031 .014 .018 .500 CATHODE .040 45*
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time
TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA IF = 50mA
MB E
MIN 80 TYP 100 1300 60 80 110 1.65 5 30 90 0.7 0.
OD-100 Datasheet
