OPTO DIODE OD-880L
HIGH-POWER GaAlAs IR EMITTERS
| Part No. | OD-880L |
|---|---|
| Datasheet | OD-880L Download |
| Manufacturer | OPTO DIODE |
| Description | HIGH-POWER GaAlAs IR EMITTERS |
| Buy | Stock & Price |
FEATURES
● High reliability liquid-phase epitaxially grown GaAlAs● 880nm peak emission for optimum matching with ODD-45W photodiode
● Wide range of linear power output
● Hermetically sealed TO-46 package
● Medium emission angle for best coverage/power density .041 1.00 MIN. GLASS DOME .015 ANODE (CASE) .209 .220 .183 .152 .186 .156 .017 .024 .043 .143 .150 .100 CATHODE .036 45° All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time IF = 100mA IF = 50mA TEST CONDITIONS MB E MIN 18 TYP 20 50 80 35 1.55 5 30 17 0.5 0.5 880 190mW 100mA 3A 5V 260°C -55°C TO 100°C 100°C 400°C/W Typical 135°C/W Typical R MAX UNITS mW mW/sr nm nm Deg 1.9 Volts Volts p...
