OPTO DIODE SXUVPS4
QUADRANT PHOTODIODE
FEATURES
● Circular active area (4 quadrants)● TO-5, 5 pin package
● 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C (PER ELEMENT) PARAMETERS TEST CONDITIONS MIN Active Area R.049 [1.25 mm] Responsivity, R See attached graph Shunt Resistance, Rsh @ ± 10 mV 100 Reverse Breakdown Voltage, VR Capacitance, C Response Time, tr IR = 1 µA VR = 0 V RL = 500 Ω, VR = 0 V 20 TYP 1.25 1 MAX UNITS mm2 MOhms Volts 500 Volts µsec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead soldering temperature1 10.080" from case for 10 seconds. -10° TO 40°C -20°C TO 80°C 70°C 260°C Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover. Revision November 19, 2013 750 Mitchell Road, Newbury Park, California 91320 Phone: (8