OSEN OSD10N10
100V N-CHANNEL MOSFET
FEATURES
:● Fast switching speed 开关速度快
● High input impedance and low level drive 高输入阻抗和低电平驱动
● Avalanche energy tested 雪崩能量测试
● Improved dv/dt capability,high ruggedness 提高 dv/dt 能力,高耐用性 TO-252
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APPLICATIONS
● High efficiency switch mode power supplies 高效率开关电源● Power factor correction 功率因数校正
● Electronic lamp ballast 电子整流器 Publication Order Number:[OSD10N10] @OSEN*Rev 21.2.10 1 OSD10N10 100V N-CHANNEL MOSFET
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ABSOLUTE MAXIMUM RATINGS
(Tc=25°C) Symbol Parameters VDSS Drain-Source Voltage 漏源电压 Gate-Source Voltage-Continuous VGS 栅源电压 Drain Current-Continuous(Note 2) ID 漏极持续电流 Drain Current-Single Plused(Note 1) IDM 漏极单次脉冲电流 Power Dissipation (Note 2) PD 功率损耗 Tj Max.Operating junction temperature 最大结温 Ratings 100 ±20 10 57 28 150 Unit V V A A W ℃● Electrical characteristics (Tc=25°C unless otherwise noted) Symbo l Parameters Static Characteristics Min Typ Max Units Conditions BVDSS Drain-Source Breakdown VoltageCurrent (Note 1) 漏极击穿电压 ID=250µA, 100 -- -- V VGS=0V,TJ=25°C Gate Threshol...