GFPUSRA1.25
Features
- Package: SMD epoxy package with silicone lens
- Typ. Radiation: 120°
- ESD: 8 k V acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B)
- Radiant Flux (@ 700m A): typ. 901 m W @ 25°C; typ. 834 m W @ 85°C
- Radiant Efficiency (@ 700m A): typ. 64.1% @ 25°C; typ. 61.1% @ 85°C
- Photon Flux (@ 700m A): typ. 5.44 μmol/s @ 25°C; typ. 5.10 μmol/s @ 85°C
- Photon Flux Efficacy (@ 700m A): typ. 3.87 μmol/J @ 25°C; typ. 3.73 μmol/J @ 85°C
- Thin Film LED chip designed and manufactured in Germany
2 | Version 1.3 | 2025-07-11
GF PUSR A1. 25 DATASHEET
Ordering Information
Type
GF PUSRA1.25-SHSK-1-1 GF PUSRA1.25-SHSK-1-1F1J GF PUSRA1.25-SJSL-1-1C1F
Photon Flux 1) IF = 700 m A ΦP
4 5.25 μmol/s
4 5.25 μmol/s
4 5.50 μmol/s
Ordering Code
Q65113A8573 Q65113A7878 Q65115A1475
3 | Version 1.3 | 2025-07-11
GF PUSR A1. 25 DATASHEET
Maximum Ratings
Parameter Operating Temperature
Storage Temperature
Junction Temperature Forward current
Surge Current t ≤ 10 µs; D = 0.005 ; TJ =...
