LWQ38E
Features
- Package: SMT package 0603, colored diffused resin
- Chip technology: Volume emitter on Sapphire (Al In Ga N)
- Typ. Radiation: 150° (horizontal = 0°), 130° (vertical = 90°)
- Color: Cx = 0.3, Cy = 0.28 acc. to CIE 1931 (- white)
- Optical efficacy: 36 lm/W
- Corrosion Robustness Class: 3B
- ESD: 8 k V acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B)
2 | Version 1.10 | 2024-12-16
Not for new design
LW Q38E DATASHEET
Ordering Information
Type
LW Q38E-Q1OO-3K6L-1 LW Q38E-Q2OO-3K5L
Luminous Intensity 1) IF = 5 m A Iv
≥ 71 mcd
≥ 90 mcd
Ordering Code
Q65110A7210 Q65110A7939
3 | Version 1.10 | 2024-12-16
Not for new design
LW Q38E DATASHEET
Maximum Ratings
Parameter
Operating Temperature
Storage Temperature
Junction Temperature Forward current TA = 25 °C Surge Current t ≤ 10 µs; D = 0.005 ; TA = 25 °C ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B) Reverse current 2)
Symbol Top Tstg Tj IF IFS VESD IR min. max. min. max. max. max. max. max.
Values -40 °C...
