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SFH483E7800 Datasheet Gaalas Infrared Emitter

Manufacturer: ams OSRAM

Overview: 2007-12-07 GaAlAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.

SFH483E7800 datasheet preview

Datasheet Details

Part number	SFH483E7800
Manufacturer	ams OSRAM
File Size	155.22 KB
Description	GaAlAs Infrared Emitter
Datasheet	SFH483E7800-OSRAM.pdf

Key Features

Fabricated in a liquid phase epitaxy process.
Anode is electrically connected to the case.
High reliability.
Matches all Si-Photodetectors.
Same package as BPX 63, BP 103, LD 242, SFH 464.
DIN humidity caregory in acc. with DIN 40 040 GQG Besondere Merkmale:.
Hergestellt im Schmelzepitaxieverfahren.
Anode galvanisch mit dem Gehäuseboden verbunden.
Hohe Zuverlässigkeit.
Gute spektrale Anpassung an Si-Foto.

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