ZP3500 Datasheet | Okaya Electric

Features - Fast response to rapid surges (10-12 sec). - Almost no performance degradation against repetitive surges. - Very low internal resistance during operation. - Very small leak current. - Mesa chip design provides high invulnerability to impulse surges. - Applications DC/CD Converter a) Protection Against Switching Surge b) Protection of DC/CD Converter Device Device c) Protection of Interface RS485A from Lighting Surge (Surge Absorber-posite Surge Protector) e) Protection of Data Line (Arrayed Surge Absorbers) .. Silicon Surge Absorber ZP/CP Series - Electrical Characteristics - Breakdown Voltage (VBR) Voltage at which avalanche current may begin to flow, normally the voltage between the surge absorber’s leads when 1m A of current is applied. - Standoff Voltage (V(R)SO) A maximum voltage that can be applied to the surge absorber continuously. Voltage vs. Current Characteristics of Model CP (Two-way type) - Reverse Leakage Current (I(R)SO) A maximum current flowing through the surge absorber when the standoff voltage is applied to the surge absorber. A maximum surge current that can flow through the surge absorber, but not repetitively. The waveform in the table is 8/20µsec. - Peak Surge Current (I(R)SM max.) - Peak Clamp Voltage (VCL max.) A maximum voltage that may be generated between the surge absorber’s leads when the peak surge current is applied to the surge absorber. Voltage vs. Current Characteristics of Model ZP (One-way type) - Maximum Allowable Power (P(R)SM max.) (P(R)SM max.)= (VCL max.) x (I(R)SM max.) Typical Capacitance between Absorber’s Leads vs. Breakdown Voltage Zero Bias (f=100k Hz) Capacitance between Absorber’s Leads Breakdown Voltage (V) .. Silicon Surge Absorber ZP/CP Series - Physical Dimensions - 2000 Series Electrical Specifications Operating Temp.: -40o C ~+125o C Power Dissipation: 3Watt(18KW @8/20usec) Breakdown Voltage (VBR) +10% @1m A Reverse Leakage Current (I(R)SO) (µA) Surge Waveform 8/20usec P eak...