OM6009SA Datasheet | Omnlrel

FEATURES - - - - - - Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Hi-Rel Screened To MIL-S-19500, TX, TXV And S Levels Bi-Lateral Zener Gate Protection (Optional) Ceramic Feedthroughs Available DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. The MOSFET gates are protected using bi-lateral zeners in the OM6109SA series. MAXIMUM RATINGS PART NUMBER OM6009SA, OM6109SA OM6010SA, OM6110SA OM6011SA, OM6111SA OM6012SA, OM6112SA VDS 100V 200V 400V 500V RDS(ON) .095 .18 .55 .85 ID(MAX) 22A 18A 10A 8A Note: OM61XX Series include gate protection circuitry. SCHEMATIC POWER RATING 4 11 R3 Supersedes 1 07 R2 - 79 - OM6112SA ELECTRICAL CHARACTERISTICS: STATIC P/N OM6009SA / OM6109SA Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Gate-Body Leakage (OM6109) Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 22 0.1 0.2 2.0 100 TC = 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: STATIC P/N OM6010SA / OM6110SA Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Gate-Body Leakage (OM6110) Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 18 1.4 0.1 0.2 2.0 200 TC = 25° unless otherwise noted Min. Typ. Max. Units Test Conditions V 4.0 100 -100 ± 500 0.25 1.0 V n A n A n A m A m A A 1.275 1.425 .085 .095 .130 .155 V VGS = 0, ID = 250 m A VDS = VGS, ID = 250 m A...