EESG3
EESG3 is Photo Micro Sensor manufactured by OMRON.
Features
- Dust-proof model with a 3.6 mm wide slot.
- Solder terminal model (EE-SG3).
- PCB terminal model (EE-SG3-B).
(Transmissive)
Note:
Two, 3.2 dia. holes
Absolute Maximum Ratings (Ta = 25°C)
Item Emitter
1.2 Four, 0.25 7.62±0.3 0.8 Four, 1.5 2.54 0.6 Four, 0.5 2.54±0.3 Cross section AA
Symbol IF IFP VR VCEO VECO
Rated value 50 m A (see note 1) 1A (see note 2) 4V 30 V --20 m A 100 m W (see note 1) --25°C to 85°C --30°C to 100°C 260°C (see note 3)
Forward current Pulse forward current Reverse voltage
Detector
Collector-Emitter voltage Emitter-Collector voltage
Cross section AA
Internal Circuit
Collector current IC Collector dissipation Unless otherwise specified, the tolerances are as shown below. Dimensions 3 mm max. 3 < mm ≤ 6 6 < mm ≤ 10 10 < mm ≤ 18 18 < mm ≤ 30 Tolerance ±0.3 ±0.375 ±0.45 ±0.55 ±0.65 Ambient temperature Operating Storage Soldering temperature Note: PC Topr Tstg Tsol
Terminal No. A K C E
Name Anode Cathode Collector Emitter
1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 µs maximum with a frequency of 100 Hz. 3. plete soldering within 10 seconds.
Ordering Information
Description
Photomicrosensor (Transmissive ( ) EE-SG3 EE-SG3-B Part number
Electrical and Optical Characteristics (Ta = 25°C)
Item Emitter Forward voltage Reverse current Peak emission wavelength Detector Light current Dark current Leakage current Collector-Emitter saturated voltage Peak spectral sensitivity wavelength Rising time Falling time IR λP IL ID ILEAK VCE (sat) λP tr tf Symbol VF Value 1.2 V typ., 1.5 V max. 0.01 µA typ., 10 µA max. 940 nm typ. 2 m A min., 40 m A max. 2 n A typ., 200 n A max. --0.1 V typ., 0.4 V max. 850 nm typ. 4 µs typ. 4 µs typ. VR = 4 V IF = 20 m A IF = 15 m A, VCE = 10 V VCE = 10 V, 0 ℓx --IF = 30 m A, IL = 1 m A VCE = 10 V VCC = 5 V, RL = 100 Ω, IL = 5 m A VCC = 5 V, RL = 100 Ω, IL = 5 m A Condition IF = 30 m A
EE-SG3/EE-SG3-B Engineering Data
Dissipation Temperature...