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HIGH-POWER GaAlAs EMITTER CHIPS
.024 .005
.006 D 2 PLACES
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OD-24x24-C
FEATURES • High current capability • 2 bond pads for uniform output
.024
• Gold contacts for high reliability bonding
• High reliability LPE GaAlAs IRLED chips All dimensions are nominal values in inches unless otherwise specified.
EMITTING SURFACE
.005 .006 N P .006 .003 .005
RoHS
GOLD CONTACTS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po TEST CONDITIONS IF = 100mA IF = 50mA IF = 200mA IR = 10MA VR = 0V 5 MIN 7 TYP 10 880 1.6 30 60 80 MAX UNITS mW nm nm
Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Forward Voltage, VF Capacitance, C Rise Time Fall Time
Reverse Breakdown Voltage, VR
2
Volts Volts Msec Msec pF
0.7 0.
OD-24X24-C Datasheet
