OL2009 Datasheet PDF

FEATURES

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● High speed phototransistor OL8110 chips Reference holes for precise mounting Compact size and low cost Also available with mounted reticle Custom design available Single chip placement for high speed applications Application
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● Optical Encoders (absolute, incremental, multi turn) Edge detection for paper Multi Element Sensor Array

ABSOLUTE MAXIMUM RATINGS

Storage and Operating Temperature -35 to +85 ºC (*) Solder Temperature (Vapor Phase 235 ºC Reflow for 30 sec) (*)Military Temperature range available on request

ELECTRICAL SPECIFICATIONS

(TA = 25ºC)
● Parameters 100% tested at waferprobe Parameter ICE0 @ 52.0 V IDARK @ 32.0 V IEC0 @ 7.7 V VCEst (I C = 2.0 mA, IB = 22.2 µA) HFE (I C = 2.0 mA, VCE = 5.0 V) Units µA nA µA mV Min Typ 0.1 1.0 0.1 290.0 750.0 Max 100.0 100.0 100.0 400.0 1000.0 500.0 Additional Parameters tested for qualification and on a lot sample basis
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● Rise time: 10.0 µs (VCC = 5.0 V, RL = 1.2 kΩ, CL = 8.0 pF, VE(peak) = 1.0 V) Fall time: 13.