OSG65R050HT3ZF
Description
The Green MOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The Green MOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.
Features
- Low RDS(ON) & FOM
- Extremely low switching loss
- Excellent stability and uniformity
Applications
- LED lighting
- Tele
- Adapter
- Sever
- Solar/UPS
Key Performance Parameters
Parameter VDS ID, pulse RDS(ON), max @ VGS=10V Qg PD
Value 650 156 50 92 320
Unit V A mΩ n C W
Marking Information
Product Name OSG65R050HT3ZF
Package TO247
Marking OSG65R050HT3Z
Package & Pin Information
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Enhancement Mode N-Channel Power...
