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OSG65R050HT3ZF Datasheet

N-channel Power MOSFET

Manufacturer: Oriental Semiconductor

OSG65R050HT3ZF Overview

The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time.

OSG65R050HT3ZF Key Features

  • Low RDS(ON) & FOM
  • Extremely low switching loss
  • Excellent stability and uniformity

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