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SFS10R12UGF Datasheet N-channel Power MOSFET

Manufacturer: Oriental Semiconductor

Overview: SFS10R12UGF Enhancement Mode N-Channel Power MOSFET General.

General Description

FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.

Key Features

  • Low RDS(ON) & FOM.
  • Extremely low switching loss.
  • Excellent reliability and uniformity.
  • Fast switching and soft recovery.

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