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SFS10R12UGF - N-Channel Power MOSFET

General Description

FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.

Key Features

  • Low RDS(ON) & FOM.
  • Extremely low switching loss.
  • Excellent reliability and uniformity.
  • Fast switching and soft recovery.

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Datasheet Details

Part number SFS10R12UGF
Manufacturer Oriental Semiconductor
File Size 824.93 KB
Description N-Channel Power MOSFET
Datasheet download datasheet SFS10R12UGF Datasheet

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SFS10R12UGF Enhancement Mode N-Channel Power MOSFET General Description FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.