SFS10R12UGF Description
FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.
SFS10R12UGF Key Features
- Low RDS(ON) & FOM
- Extremely low switching loss
- Excellent reliability and uniformity
- Fast switching and soft recovery