SFS10R12UGF
Description
FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.
Features
- Low RDS(ON) & FOM
- Extremely low switching loss
- Excellent reliability and uniformity
- Fast switching and soft recovery
Applications
- PD charger
- Motor driver
- Switching voltage regulator
- DC-DC convertor
- Switching mode power supply
Key Performance Parameters
Parameter
Value
VDS ID, pulse RDS(ON), max @ VGS=10V Qg
100 280 12 22
Unit V A mΩ n C
Marking Information
Product Name SFS10R12UGF
Package PDFN5×6
Marking SFS10R12UG
Package & Pin information
Oriental Semiconductor © Copyright Reserved V1.0
Page.1
Enhancement Mode N-Channel Power MOSFET
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
Parameter
Symbol
Drain-source voltage
Gate-source...
