F1047B Datasheet | ams OSRAM

Features - Typ. total radiant power: 22 m W @ 100 m A in TOPLED® package. - Chipsize: 300 x 300 µm² - Very highly efficient Ga Al As LED - High reliability - High pulse handling capability - Good spectral match to silicon photodetectors - Frontside metallization: aluminum Backside metallization: gold alloy - Delivery: diced on foil Applications - IR remote control for hifi and TV sets, video tape recorder, dimmers - Remote control for steady and varying intensity - Light-reflection switches (max. 500 k Hz) - Sensor technology - Discrete optocouplers Typ Type F 1047A F 1047B Bestellnummer Ordering Code Q67220-C1386 on request Beschreibung Description Infrarot emittierender Chip, Oberseite Kathodenanschluss Infrared emitting die, top side cathode connection Infrarot emittierender Chip, Oberseite Kathodenanschluss, Oberfläche aufgerauht. Infrared emitting die, top side cathode connection, surface frosted 2003-04-11 .. F 1047A, F 1047B Elektrische Werte (TA = 25 °C) Electrical values1) (TA = 25 °C) Bezeichnung Parameter Emissionswellenlänge Peak wavelength IF = 10 m A Spektrale Bandbreite bei 50% von Imax, Spectral bandwidth at 50% of Imax IF = 10 m A Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 m A, RL = 50 Ω Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 100 m A, RL = 50 Ω Sperrspannung Reverse voltage I R = 1µ A Durchlaβspannung Forward voltage IF = 100 m A Strahlungsleistung Radiant Power3) IF = 100 m A F1047A F1047B Photostrom (Spezifikationsparameter) Photocurrent (specified parameter) IF = 100 m A F1047A F1047B 1) Symbol Symbol min. λpeak Wert Value2) typ. 880 max. Einheit Unit nm ∆λ 100 nm tr, tf 0.5/0.4 µs Φe 12 14 Ie m W m W 0.50 0.65 a.u. a.u. Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and each fragment of a wafer is subject to final testing. The wafer or its pieces are individually attached on foils (ring). Sample chips are picked...