Datasheet4U Logo Datasheet4U.com

Q62702P1759 - Laser Diode

Key Features

  • Low cost plastic package.
  • Reliable strained InGaAs/GaAs material.
  • High power large-optical-cavity (LOC) structure for a narrow far-field.
  • Lateral laser aperture 200 µm.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
Q62702P1137 Infra-red Emitter 5mm Siemens
Q62702-A0042 Silicon Crossover Ring Quad Schottky Diode Siemens Semiconductor Group
Q62702-A0043 Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators) Siemens Semiconductor Group
Q62702-A0062 Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) Siemens Semiconductor Group
Q62702-A0960 Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) Siemens Semiconductor Group

Other Datasheets by ams OSRAM

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Impuls-Laserdiode im Plastikgehäuse 10 W Spitzenleistung Pulsed Laser Diode in Plastic Package 10 W Peak Power SPL PL85 Besondere Merkmale • Kostengünstiges Plastikgehäuse • Zuverlässiges InGaAs/GaAs kompressiv verspanntes Halbleiter-Material • Hochleistungslaser mit „Large-Optical-Cavity“ (LOC) Struktur für ein schmales Fernfeld • Laterale Austrittsöffnung 200 µm Anwendungen • • • • Entfernungsmessung Sicherheit, Überwachung Beleuchtung, Zündung Test- und Messsysteme Features • Low cost plastic package • Reliable strained InGaAs/GaAs material • High power large-optical-cavity (LOC) structure for a narrow far-field • Lateral laser aperture 200 µm Applications • • • • Range finding Security, surveillance Illumination, ignition Test and measurement systems Sicherheitshinweise Je nach Bet