40H20AD - N-Channel Enhancement Mode Power MOSFET

Description

The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.0mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram.

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40H20AD N-Channel Enhancement Mode Power MOSFET by OuCan - Datasheet Preview — Datasheet preview – 40H20AD

Datasheet Details

Part number	40H20AD
Manufacturer	OuCan
File Size	283.77 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	40H20AD Datasheet
Additional preview pages of the 40H20AD datasheet.

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Full PDF Text Transcription

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FQB200N04 N-Channel Enhancement Mode Power MOSFET Description The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.

Published: Jan 29, 2019 |