40H20AD Overview
Description
The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Key Features
- VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.0mΩ)
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
