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FQB200N04 - N-Channel Enhancement Mode Power MOSFET

General Description

The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.0mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet Details

Part number FQB200N04
Manufacturer OuCan
File Size 290.78 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet FQB200N04 Datasheet

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FQB200N04 N-Channel Enhancement Mode Power MOSFET Description The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.