Datasheet4U.com

FQB200N04 - N-Channel Enhancement Mode Power MOSFET

Product Overview

📥 Download Datasheet

FQB200N04 N-Channel Enhancement Mode Power MOSFET by OuCan - Datasheet Preview — Datasheet preview – FQB200N04

Datasheet Details

Part number	FQB200N04
Manufacturer	OuCan
File Size	290.78 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	FQB200N04 Datasheet
Additional preview pages of the FQB200N04 datasheet.

Product details

Description

The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.0mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram.

📁 Similar Datasheet

FQB20N06 - 60V N-Channel MOSFET (Fairchild Semiconductor)
FQB20N06L - 60V LOGIC N-Channel MOSFET (Fairchild Semiconductor)
FQB22P10 - 100V P-Channel MOSFET (Fairchild Semiconductor)
FQB22P10TM-F085 - P-Channel MOSFET (ON Semiconductor)
FQB22P10TM_F085 - 100V P-Channel MOSFET (Fairchild Semiconductor)
FQB24N08 - 80V N-Channel MOSFET (Fairchild Semiconductor)
FQB25N33 - N-Channel MOSFET (Fairchild Semiconductor)
FQB25N33TM-F085 - N-Channel MOSFET (ON Semiconductor)

Other Datasheets by OuCan

Published: Jan 29, 2019 |