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FQD1N60 FQU1N60 FQI1N60
600V,1.3A N-Channel MOSFET
General Description
Product Summary
The FQD1N60 & FQU1N60 & FQI1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested! 100% Rg Tested!
700V@150℃ 1.
FQD1N60 Datasheet
