FQI1N60
FQI1N60 is 1.3A N-Channel MOSFET manufactured by OuCan.
Description
Product Summary
The FQD1N60 & FQU1N60 & FQI1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested! 100% Rg Tested!
700V@150℃ 1.3A < 9Ω
TO252 DPAK Bottom View
TO251A
IPAK
TO251
Bottom View
Bottom View
FQD1N60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TC=25°C
Current B
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
Peak diode recovery dv/dt
IDM IAR EAR EAS dv/dt
TC=25°C Power Dissipation B Derate above 25o C
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
G S DG FQU1N60
Maximum 600 ±30 1.3 0.8 4 1 15 30 5 45 0.36
-50 to...
