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FR620N - N-Channel Enhancement Mode Power MOSFET

Description

The FR620N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 200V,ID =6A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.

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Datasheet Details

Part number FR620N
Manufacturer OuCan
File Size 236.83 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet FR620N Datasheet

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N-Channel Enhancement Mode Power MOSFET Description The FR620N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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