Datasheet Details
| Part number | FQD60N07 |
|---|---|
| Manufacturer | Oucan Semi |
| File Size | 435.29 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | FQD60N07-OucanSemi.pdf |
|
|
Overview: FQ D 60N07 60V N-Channel MOSFET General.
| Part number | FQD60N07 |
|---|---|
| Manufacturer | Oucan Semi |
| File Size | 435.29 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | FQD60N07-OucanSemi.pdf |
|
|
|
The FQD60N07 used advanced trench technology to provide excellent RDS(ON) and low gate charge.
Those devices are suitable for use as a load switch or in PWM applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 5V) 60V 60A < 18mΩ < 25mΩ 100% UIS Tested 100% Rg Tested Top View D TO252 DPAK Bottom View D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG GG Maximum 60 ±20 60 30 80 7 5 30 45 60 30 2.1 1.3 -55 to 175 S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 17.4 51 1.8 Max 25 60 2.5 Rev 0 : Aug 2011 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=48V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A VGS=4.5V, ID=30A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS
| Part Number | Description |
|---|---|
| FQD60N0 | N-Channel MOSFET |
| FQD12N06 | 60V N-Channel MOSFET |
| FQD4N60 | 600V 4A N-Channel MOSFET |
| FQD4N65 | 4A N-Channel MOSFET |