GENERAL DESCRIPTION
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 2A < 4.4Ω TO-220 Top View TO-220F D G S ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol FQP2N60 FQPF2N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 2 2* 1.7 1.7* 8 2 60 120 5 TC=25°C Power Dissipation B Derate above 25oC PD 74 31 0.6 0.25 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP2N60 65 0.5 FQPF2N60 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 1.7 4 Units V V A A mJ mJ V/ns W W/ oC...
