Datasheet Summary
FQP10N65/FQPF10N65
650V,10A N-Channel MOSFET
General Description
Product Summary
The FQP10N65 & FQPF10N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
750V@150℃ 10A < 1Ω
TO-220
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