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ST 2SC2901
NPN Silicon Epitaxial Planar Transistor
for general purpose amplifier and high speed switching applications.
The transistor is subdivided into two groups L and K, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (10 µs pulse) Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCES VCEO VEBO IC ICP Ptot Tj Tstg
1. Emitter 2. Base 3.
2SC2901 Datasheet
