PACO LLDB4
Silicon Bidirectional Trigger Diodes
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Power Dissipation (Ta = 65 OC) Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz) Operating Junction and Storage Temperature Range Symbol Value Unit Ptot 150 mW ITRM 2 A Tj, Tstg - 40 to + 125 OC Characteristics at Ta = 25 OC Parameter Breakover Voltage at C = 22 nF, see diagram 1 Breakover Voltage Symmetry at C = 22 nF, see diagram 1 Dynamic Breakover Voltage at ΔI = [IBO to IF = 10 mA] Output Voltage See diagram 2 Breakover Current at C = 22 nF Leakage Current at VB = 0.5 VBO max Rise Time See diagram 3 LLDB3 LLDB4 Symbol VBO [|+VBO|-|-VBO|] | ΔV ± | VO IBO IB tr Min. Max. Unit 28 36 V 35 45 - 3 V 5 - V 5 - V - 50 µA - 10 µA - 2 µs Dated : 08/08/2009 LLDB3, LLDB4 Dated : 08/08/2009