PACO MMBTSC3875
NPN Silicon Epitaxial Planar Transistor
| Part No. | MMBTSC3875 |
|---|---|
| Datasheet | MMBTSC3875 Download |
| Manufacturer | PACO |
| Description | NPN Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TStg Value 60 50 5 150 30 200 150 -55 to +150 Unit V V V mA mA mW OC OC Dated : 20/10/2005 MMBTSC3875 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit DC Current Gain at VCE=6V, IC=2mA Current Gain Group O hFE 70 - 140 - Y hFE 120 - 240 - G hFE 200 - 400 - L hFE 300 - 700 - Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current VCE(sat) - - 0.25 V at VCB=60V Emitter Cutoff Current ICBO - - 0.1 µA at VEB=5V Transition Frequency IEBO - - 0.1 µA at VCE=10V, IC=1mA Collector Output Capacitance fT 80 - - MHz at VCB=10V, f=1MHz COB - 2 3.5 pF Noise Figure at VCE=6V, IC=0.1mA, f=1KHz, RG=10KΩ NF - 1 10 dB Dated : 20/10/2005 MMBTSC3875 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VCE(sat) (V) I C-VCE 280 240 200...
