ST2SA1505 Datasheet | PACO

ST 2SA1505 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj Tstg Value 35 30 5 500 50 150 150 - 55 to + 150 Unit V V V m A m A m W Characteristics at Ta = 25 OC Parameter DC Current Gain Current Gain Group at -VCE = 1 V, -IC = 100 m A at -VCE = 6 V, -IC = 400 m A Collector Base Cutoff Current at -VCB = 35 V Emitter Base Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 100 m A, -IB = 10 m A Base Emitter Voltage at -VCE = 1 V, -IC = 100 m A Gain Bandwidth Product at -VCE = 6 V, -IC = 20 m A Output Capacitance at -VCB = 6 V, f = 1 MHz Symbol O Y O Y h FE h FE h FE h FE -ICBO -IEBO -VCE(sat) -VBE f T Cob Min. 70 120 25 40 - Typ. 0.1 0.8 200 13 Max. 140 240 0.1 0.1 0.25 1 - Unit µA µA V V MHz p F Dated : 12/12/2002 Free Datasheet...