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MMBZ5222BTW - SURFACE MOUNT SILICON ZENER DIODES

Download the MMBZ5222BTW datasheet PDF. This datasheet also covers the MMBZ5221BTW variant, as both devices belong to the same surface mount silicon zener diodes family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Planar Die Construction.
  • 200mW Power Dissipation.
  • Zener Voltages from 2.4~51V.
  • Ideally Suited for Automated Assembly Processes.
  • In compliance with EU RoHS 2002/95/EC directives.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMBZ5221BTW-PANJIT.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by PanJit Semiconductor

Part Number Description
MMBZ5222BW SURFACE MOUNT SILICON ZENER DIODES
MMBZ5221BTW SURFACE MOUNT SILICON ZENER DIODES
MMBZ5221BW SURFACE MOUNT SILICON ZENER DIODES
MMBZ5223BTW SURFACE MOUNT SILICON ZENER DIODES
MMBZ5223BW SURFACE MOUNT SILICON ZENER DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MMBZ5221BTW~MMBZ5262BTW SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 51 Volts POWER 200 mWatts FEATURES • Planar Die Construction • 200mW Power Dissipation • Zener Voltages from 2.4~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.0002 ounces, 0.006 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ=25OC unless otherwise noted) PARAMETER Power Dissipation (Note A) Peak Forward Surge Current,8.3ms single half sine-wave superimposed on rated load (JEDEC method) (Notes B) Operating Junction Temperature and Storage Temperature Range SYMBOL PD IFS M TJ ,TSTG VALUE 200 2.0 -55 to +150 UNITS mW A OC NOTES: A.