• Part: PCDP0865G1
  • Description: Silicon Carbide Schottky Barrier Diode
  • Category: Diode
  • Manufacturer: PanJit Semiconductor
  • Size: 1.82 MB
PCDP0865G1 Datasheet (PDF) Download
PanJit Semiconductor
PCDP0865G1

Key Features

  • Temperature Independent Switching Behavior
  • High Surge Current Capability
  • Positive Temperature Coefficient on VF
  • Low Conduction Loss
  • Zero Reverse Recovery
  • High junction temperature 175 oC
  • Lead free in pliance with EU RoHS 2.0
  • Green molding pound as per IEC 61249 standard Mechanical Data
  • Case: TO-220AC molded plastic
  • Terminals: Solderable per MIL-STD-750, Method 2026