PCDP0865G1 - Silicon Carbide Schottky Barrier Diode

Datasheet Summary

Features

TO-220AC.
Temperature Independent Switching Behavior.
High Surge Current Capability.
Positive Temperature Coefficient on VF.
Low Conduction Loss.
Zero Reverse Recovery.
High junction temperature 175 oC.
Lead free in compliance with EU RoHS 2.0.
Green molding compound as per IEC 61249 standard Mechanical Data.
Case: TO-220AC molded plastic.
Terminals: Solderable per MIL-STD-750, Method 2026.
Approx. Weight: 0.067 ounces, 1.89 grams Appli.

PAN JIT

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Datasheet Details

Part number	PCDP0865G1
Manufacturer	PAN JIT
File Size	1.82 MB
Description	Silicon Carbide Schottky Barrier Diode
Datasheet	PCDP0865G1 Datasheet
Additional preview pages of the PCDP0865G1 datasheet.

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Silicon Carbide Schottky Barrier Diode VRRM 650 V IF 8A VF(Typ.) 1.5 V QC 15.7 nC Features TO-220AC  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-220AC molded plastic  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.067 ounces, 1.

Published: Jun 25, 2023 |