PCDP0865G1 Overview
Silicon Carbide Schottky Barrier Diode VRRM 650 V IF 8A VF(Typ.) 1.5 V QC 15.7.
PCDP0865G1 Key Features
- Temperature Independent Switching Behavior
- High Surge Current Capability
- Positive Temperature Coefficient on VF
- Low Conduction Loss
- Zero Reverse Recovery
- High junction temperature 175 oC
- Lead free in pliance with EU RoHS 2.0
- Green molding pound as per IEC 61249 standard
- Case: TO-220AC molded plastic
- Terminals: Solderable per MIL-STD-750, Method 2026