- Part: PCDP0865G1
- Description: Silicon Carbide Schottky Barrier Diode
- Manufacturer: PanJit Semiconductor
- Size: 1.82 MB
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PCDP0865G1 Key Features
- Temperature Independent Switching Behavior
- High Surge Current Capability
- Positive Temperature Coefficient on VF
- Low Conduction Loss
- Zero Reverse Recovery
- High junction temperature 175 oC
- Lead free in pliance with EU RoHS 2.0
- Green molding pound as per IEC 61249 standard
- Case: TO-220AC molded plastic
- Terminals: Solderable per MIL-STD-750, Method 2026
