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1N5261B Datasheet PDF

PANJIT International 1N5261B

SILICON ZENER DIODES

Part No. 1N5261B
Datasheet 1N5261B Download
Manufacturer PANJIT International
Description SILICON ZENER DIODES
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1N5261B datasheet page 1 preview

FEATURES

● Planar Die construction
● 500mW Power Dissipation
● Ideally Suited for Automated Assembly Processes
● Lead free in compliance with EU RoHS 2011/65/EU directive

MECHANICAL DATA

● Case: Molded Glass DO-35
● Terminals: Solderable per MIL-STD-750, Method 2026
● Polarity: See Diagram Below
● Approx. Weight: 0.005 ounces, 0.13 grams
● Ordering information: Suffix : “ -35 ” to order DO-35 Package
● Packing information B - 2K per Bulk box T/R - 10K per 15" plastic Reel T/B - 5K per horiz. tape & Ammo box

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Parameter Symbol Power Dissipation at TA= 25OC PTOT Junction Temperature TJ Storage Temperature Range TSTG Valid provided that leads at a distance of 8mm from case are kept at ambient temperature. Value 500 175 -65 to +175 Units mW OC OC Parameter Symbol Min. Thermal Resistance Junction to Ambient Air RθJA -- For
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