PANJIT International 2N7002K
N-channel MOSFET
FEATURES
● RDS(ON), VGS@10V,IDS@500mA=3Ω● RDS(ON), VGS@4.5V,IDS@200mA=4Ω
● Advanced Trench Process Technology
● High Density Cell Design For Ultra Low On-Resistance
● Very Low Leakage Current In Off Condition
● Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
● ESD Protected 2KV HBM
● In compliance with EU RoHS 2002/95/EC directives MECHANICALDATA
● Case: SOT-23 Package
● Terminals : Solderable per MIL-STD-750,Method 2026
● Marking : K72
● Approx. Weight: 0.008gram Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER S ym b o l Drain-Source Voltage V DS Gate-Source Voltage V GS Continuous Drain Current ID Pulsed Drain Current 1) Maximum Power Dissipation TA= 2 5 OC TA= 7 5 OC Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Range Junction-to Ambient Thermal Resistance(PCB mounted)2 ID M PD TJ,TSTG R θJ A Limit 60 +20 300 2000 350 210 -55 to + 150 357 Uni ts V V mA mA mW OC OC /W Note: 1.