PANJIT International 2N7002KW-AU
60V N-Channel MOSFET
FEATURES
● RDS(ON), VGS@10V, ID@500mA<3Ω● RDS(ON), VGS@4.5V, ID@200mA<4Ω
● Advanced Trench Process Technology
● High Density Cell Design For Ultra Low On-Resistance
● Very Low Leakage Current In Off Condition
● Specially Designed for Battery Operated Systems, Solid- State Relays Drivers: Relay, Displays, Memories, etc
● ESD Protected 2KV HBM
● AEC-Q101 qualified
● Lead free in compliance with EU RoHS 2.0
● Green molding compound as per IEC 61249 standard
MECHANICAL DATA
● Case : SOT-323 Package● Terminals : Solderable per MIL-STD-750, Method 2026
● Approx. Weight : 0.0002 ounces, 0.005 grams Unit: inch(mm)
MAXIMUM RATINGS
and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal Resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT 60 +20 250 10...