2N7002KW-AU Datasheet | PanJit Semiconductor

Features - RDS(ON), VGS@10V, ID@500m A<3Ω - RDS(ON), VGS@4.5V, ID@200m A<4Ω - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Very Low Leakage Current In Off Condition - Specially Designed for Battery Operated Systems, Solid- State Relays Drivers: Relay, Displays, Memories, etc - ESD Protected 2KV HBM - AEC-Q101 qualified - Lead free in pliance with EU Ro HS 2.0 - Green molding pound as per IEC 61249 standard Mechanical Data - Case : SOT-323 Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.0002 ounces, 0.005 grams Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25o C Derate above 25o C Operating Junction and Storage Temperature Range Typical Thermal Resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM TJ,TSTG RθJA LIMIT 60 +20 250 1000 350 2.8 -55~150 UNITS V m A m W m W/ o C o C o C/W October 27,2017-REV.01 Page...