PANJIT International 2N7002TB
60V N-Channel MOSFET
FEATURES
● RDS(ON), VGS@10V,IDS@500mA=5Ω● RDS(ON), VGS@4.5V,IDS@50mA=7.5Ω
● Advanced Trench Process Technology
● High Density Cell Design For Ultra Low On-Resistance
● Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
● Lead free in compliance with EU RoHS 2011/65/EU directive
● Green molding compound as per IEC61249 Std.. (Halogen Free)
MECHANICAL DATA
● Case: SOT-523, Plastic● Terminals: Solderable per MIL-STD-750, Method 2026
● Approx. Weight: 0.00007 ounce, 0.002 gram
● Marking: 72 3 D GS 12
MAXIMUM RATINGS
and Thermal Characteristics (TA=25OC unless otherwise noted ) Drain-Source Voltage PARAMETER Gats-Source Voltage Continous Drain Current Pulsed Drain Current (1) Maximum Power Dissipation Junction-to Ambient Thermal Resistance (PCB mounted)2 Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e TA=25oC TA=75oC SYMBOL VDS VGS ID I DM PD RΘJA TJ,TSTG LIMIT 60 +20 115 800 150 90 833...