BAS70ADW Datasheet | PanJit Semiconductor

feature electrically-isolated Schottky diodes connected in varios configurations housed in a very small SOT-363 FEATURES - Maximum forward voltage @ 1m A of 0.41V - Maximum leakage current @ 50V of 100n A - Reverse voltage rating of 70V - Lead free in pliance with EU Ro HS 2011/65/EU directive - Green molding pound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA - Case: SOT-363, Plastic - Terminals: Solderable per MIL-STD-750, Method 2026 - Approx weight: 0.0002 ounces, 0.006 grams - Marking: BAS70TW: A70, BAS70ADW:A72, BAS70CDW: A73, BAS70SDW:A74 APPLICATOINS - Rail-to rail ESD protection - Overshoot and undershoot switching control - Mobile phones and accessories - Video fame consoles connector ports MAXIMUM RATING (Per Diode) TJ=25o C Unless otherwise noted Parameter Repetitve Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Non-repetitive Peak Forward Surge Current, t=1s, Square Wave Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Note : 1.FR-5 Board 1 x 0.75 x 0.062 in. Symbol VRRM VR IF I FSM PTOT RΘJA TJ TSTG Value 70 70 200 0.6 225 556 -55 to +125 -55 to +125 Units V V m A A m W o C/W o C o C April 25,2016-REV.04 BAS70TW Fig.50 (TOP VIEW) Fig.46 (TOP VIEW) BAS70CDW Fig.47 (TOP VIEW) BAS70SDW Fig45 (TOP VIEW) PAGE . 1 BAS70TW/ADW/CDW/SDW ELECTRICAL CHARACTERISTICS (Per Diode) T =25o C Unless otherwise noted J Parameter Breakdown Voltage (Note 2) Forward Voltage (Note 2) Reverse Leakage Current (Note 2) Symbol VBR VF IR Test...