PANJIT International F10N65
650V N-Channel Enhancement Mode MOSFET
| Part No. | F10N65 |
|---|---|
| Datasheet | F10N65 Download |
| Manufacturer | PANJIT International |
| Description | 650V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
● 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB● Low ON Resistance
● Fast Switching
● Low Gate Charge
● Fully Characterized Avalanche Voltage and Current
● Specially Desigened for AC Adapter, Battery Charge and SMPS
● In compliance with EU RoHs 2002/95/EC Directives 3 2 S 1D G ITO-220AB 1 2 3 D S G
MECHANICAL DATA
● Case: TO-220AB / ITO-220AB Molded Plastic● Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM 2 Drain ORDERING INFORMATION TYPE PJP10N65 MARKING P10N65 PJF10N65 F10N65 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE 1 Gate 3 Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Symbol PJP10N65 PJF10N65 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS +30 Continuous Drain Current ID 10 10 Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TA= 2 5 OC IDM PD 40 156 1.25 40 50 0.4 Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng...
