• Part: PCDP0865G1
  • Description: Silicon Carbide Schottky Barrier Diode
  • Category: Diode
  • Manufacturer: PanJit Semiconductor
  • Size: 1.82 MB
Download PCDP0865G1 Datasheet PDF
PanJit Semiconductor
PCDP0865G1
PCDP0865G1 is Silicon Carbide Schottky Barrier Diode manufactured by PanJit Semiconductor.
Features TO-220AC - Temperature Independent Switching Behavior - High Surge Current Capability - Positive Temperature Coefficient on VF - Low Conduction Loss - Zero Reverse Recovery - High junction temperature 175 o C - Lead free in pliance with EU Ro HS 2.0 - Green molding pound as per IEC 61249 standard Mechanical Data - Case: TO-220AC molded plastic - Terminals: Solderable per MIL-STD-750, Method 2026 - Approx. Weight: 0.067 ounces, 1.89 grams Application - PFC, UPS, PV Inverter, EV Charging Station, Welder Maximum Ratings and Thermal Characteristics (TC = 25 o C unless otherwise specified) PARAMETER Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Surge Current Half Sine Wave, D=0.1 Peak Forward Surge Current Half Sine Wave Peak Forward Surge Current tp =10us, Pulse Maximum Power Dissipation TC= 140 o C TC= 25 o C , tp =10ms TC=125 o C , tp =10ms TC= 25 o C , tp =10ms TC=125 o C , tp =10ms Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VDC IF IFRM IFSM Ptotal TJ TSTG LIMIT 650 650 8 32 24 36 32 71.1 -55~175 -55~175 UNITS V V A A A W o C o C November 9,2020 PCDP0865G1-REV.00 Page 1 Electrical Characteristics (TC = 25 o C unless otherwise specified) PARAMETER Forward Voltage Drop Reverse Leakage Current Total Capacitive Charge Total Capacitance Capacitance Stored Energy Thermal...