PCDP0865G1
PCDP0865G1 is Silicon Carbide Schottky Barrier Diode manufactured by PanJit Semiconductor.
Features
TO-220AC
- Temperature Independent Switching Behavior
- High Surge Current Capability
- Positive Temperature Coefficient on VF
- Low Conduction Loss
- Zero Reverse Recovery
- High junction temperature 175 o C
- Lead free in pliance with EU Ro HS 2.0
- Green molding pound as per IEC 61249 standard
Mechanical Data
- Case: TO-220AC molded plastic
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.067 ounces, 1.89 grams
Application
- PFC, UPS, PV Inverter, EV Charging Station, Welder Maximum Ratings and Thermal Characteristics (TC = 25 o C unless otherwise specified)
PARAMETER
Repetitive Peak Reverse Voltage
DC Blocking Voltage Continuous Forward Current Repetitive Peak Surge Current Half Sine Wave, D=0.1 Peak Forward Surge Current Half Sine Wave Peak Forward Surge Current tp =10us, Pulse Maximum Power Dissipation
TC= 140 o C TC= 25 o C , tp =10ms TC=125 o C , tp =10ms TC= 25 o C , tp =10ms TC=125 o C , tp =10ms
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL VRRM VDC IF IFRM
IFSM
Ptotal TJ TSTG
LIMIT 650 650
8 32 24 36 32
71.1 -55~175 -55~175
UNITS V V A A
A W o C o C
November 9,2020
PCDP0865G1-REV.00
Page 1
Electrical Characteristics (TC = 25 o C unless otherwise specified)
PARAMETER Forward Voltage Drop
Reverse Leakage Current Total Capacitive Charge
Total Capacitance
Capacitance Stored Energy Thermal...