PCDP15120G1 - Silicon Carbide Schottky Barrier Diode

Datasheet Summary

Features

TO-220AC.
Temperature Independent Switching Behavior.
High Surge Current Capability.
Positive Temperature Coefficient on VF.
Low Conduction Loss.
Zero Reverse Recovery.
High junction temperature 175 oC.
Lead free in compliance with EU RoHS 2.0.
Green molding compound as per IEC 61249 standard Mechanical Data.
Case: TO-220AC molded plastic.
Terminals: Solderable per MIL-STD-750, Method 2026.
Approx. Weight: 0.067 ounces, 1.89 grams Appli.

PANJIT

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Datasheet Details

Part number	PCDP15120G1
Manufacturer	PANJIT
File Size	1.75 MB
Description	Silicon Carbide Schottky Barrier Diode
Datasheet	PCDP15120G1 Datasheet
Additional preview pages of the PCDP15120G1 datasheet.

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Silicon Carbide Schottky Barrier Diode VRRM 1200 V IF 15 A VF(Typ.) 1.5 V QC 67 nC Features TO-220AC  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-220AC molded plastic  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.067 ounces, 1.

Published: Jul 30, 2025 |