Datasheet4U Logo Datasheet4U.com

PCDP15120G1 - Silicon Carbide Schottky Barrier Diode

Key Features

  • TO-220AC.
  • Temperature Independent Switching Behavior.
  • High Surge Current Capability.
  • Positive Temperature Coefficient on VF.
  • Low Conduction Loss.
  • Zero Reverse Recovery.
  • High junction temperature 175 oC.
  • Lead free in compliance with EU RoHS 2.0.
  • Green molding compound as per IEC 61249 standard Mechanical Data.
  • Case: TO-220AC molded plastic.
  • Terminals: Solderable per MIL-STD-750, Method 2026.
  • Approx. Weight: 0.067 ounces, 1.89 grams Appli.

📥 Download Datasheet

Other Datasheets by PanJit Semiconductor

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Carbide Schottky Barrier Diode VRRM 1200 V IF 15 A VF(Typ.) 1.5 V QC 67 nC Features TO-220AC  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-220AC molded plastic  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.067 ounces, 1.