PANJIT International PJD15N06L
N-Channel Enhancement Mode MOSFET
| Part No. | PJD15N06L |
|---|---|
| Datasheet | PJD15N06L Download |
| Manufacturer | PANJIT International |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
● RDS(ON), VGS@10V,IDS@10A=40mΩ● RDS(ON), VGS@4.5V,IDS@8.0A=50mΩ
● Advanced Trench Process Technology
● High Density Cell Design For Ultra Low On-Resistance
● Specially Designed for DC/DC Converters
● Fully Characterized Avalanche Voltage and Current
● Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA
● Case: TO-252 Molded Plastic
● Terminals : Solderable per MIL-STD-750D,Method 1036.3
● Marking : 15N06L Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l V DS V GS ID ID M T A = 2 5 OC T A = 7 5 OC PD T J , T S TG E AS RθJC RθJA Li mi t 60 +20 15 60 38 22 -5 5 to + 1 5 0 120 3 .3 50 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r...
