PJE8408
PJE8408 is 20V N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features
- Low Voltage Drive (1.2V).
- Advanced Trench Process Technology
- Specially Designed for Switch Load, PWM Application, etc.
- ESD Protected
- Lead free in pliance with EU Ro HS 2.0
- Green molding pound as per IEC 61249 standard
SOT-523
Mechanical Data
- Case : SOT-523 Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- Approx. Weight : 0.002 grams
- Marking : E08
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note 4)
Power Dissipation
Ta=25o C Derate above 25o C
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
- Junction to Ambient(Note 3)
SYMBOL VDS VGS ID IDM
TJ,TSTG
RθJA
LIMIT 20 +10 500
1000 300 2.4 -55~150
UNITS V V m A m A m W m W/ o C o C o C/W
August 10,2022
PJE8408-REV.02
Page 1
Electrical Characteristics (TA=25o C unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic(Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward...