• Part: PJQ1916
  • Description: 20V N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: PanJit Semiconductor
  • Size: 768.90 KB
Download PJQ1916 Datasheet PDF
PanJit Semiconductor
PJQ1916
PJQ1916 is 20V N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features - Advanced Trench Process Technology - ESD Protected - Specially Designed for Switch Load, PWM Application, etc - Lead free in pliance with EU Ro HS 2.0 - Green molding pound as per IEC 61249 standard DFN1006-3L Mechanical Data - Case : DFN1006-3L Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.00002 ounces, 0.0007 grams Unit: inch(mm) Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) Pulsed Drain Current (Note 1) Power Dissipation Ta=25o C Derate above 25o C Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3,4) SYMBOL VDS VGS ID IDM TJ,TSTG RθJA - Limited only By Maximum Junction Temperature LIMIT 20 +8 950 1900 500 4 -55~150 UNITS V m A m W m W/ o C o C o C/W January 10,2020 PJQ1916-REV.00 Page 1 PPJQ1916 Electrical Characteristics (TA=25o C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State...