PJQ1916
PJQ1916 is 20V N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features
- Advanced Trench Process Technology
- ESD Protected
- Specially Designed for Switch Load, PWM Application, etc
- Lead free in pliance with EU Ro HS 2.0
- Green molding pound as per IEC 61249 standard
DFN1006-3L
Mechanical Data
- Case : DFN1006-3L Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- Approx. Weight : 0.00002 ounces, 0.0007 grams
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4)
Pulsed Drain Current (Note 1)
Power Dissipation
Ta=25o C Derate above 25o C
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3,4)
SYMBOL VDS VGS ID IDM
TJ,TSTG
RθJA
- Limited only By Maximum Junction Temperature
LIMIT 20 +8 950
1900 500
4 -55~150
UNITS V m A m W m W/ o C o C o C/W
January 10,2020
PJQ1916-REV.00
Page 1
PPJQ1916
Electrical Characteristics (TA=25o C unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State...