PJS6839
PJS6839 is 60V Dual P-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features
- RDS(ON), VGS@-10V, ID@-500m A<4Ω
- RDS(ON), VGS@-4.5V, ID@-200m A<6Ω
- RDS(ON), VGS@-2.5V, ID@-50m A<13Ω
- Advanced Trench Process Technology
- Specially Designed for Relay driver, Speed line drive, etc
- Lead free in pliance with EU Ro HS 2.0
- Green molding pound as per IEC 61249 standard
Mechanical Data
- Case: SOT-23 6L Package
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.0005 ounces, 0.0141 grams
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current(Note 4)
Power Dissipation
Ta=25o C Derate above 25o C
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
- Junction to Ambient(Note 3)
SYMBOL VDS VGS ID IDM
TJ,TSTG
RθJA
LIMIT -60 +20 -300
-1000 500
4 -55~150
UNITS V V m A m A m W m W/ o C o C o C/W
January 20,2022
PJS6839-REV.01
Page 1
Electrical Characteristics (TA=25o C unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic(Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward...