SDM1050LCS
SDM1050LCS is Ultra Low VF Schottky Rectifier manufactured by PanJit Semiconductor.
FEATURES
- Ultra low forward voltage drop, low power loss
- High efficiency operation
- Lead free in pliance with EU Ro HS 2011/65/EU directive
- Green molding pound as per IEC61249 Std. . (Halogen Free)
50 Volt
CURRENT
10 Ampere
MECHANICAL DATA
- Case: TO-252 molded plastic
- Terminals: Solder plated, solderable per MIL-ST D-750, Method 2026
- Polarity: As marking
- Weight: 0.0104 ounces, 0.297 grams.
MAXIMUM RATINGS(TA=25o C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum rms voltage Maximum dc blocking voltage Maximum average forward rectified current Peak forward surge current : 8.3ms single half sine-wave superimposed on rated load Typical thermal resistance per diode Operating junction temperature range Storage temperature range per device per diode per diode ( No te 1 )
SYMBOL VRRM VRMS VR I F(AV) I FSM R JC TJ TSTG
VALUE 50 35 50 10 5 80 8 -55 to + 150 -55 to + 150
UNIT V V V A A
C /W o
C C o
Note : 1. Mounted on 10cm x 10cm x 0.5mm copper pad area
December 27,2013-REV.00
PAGE . 1
Free Datasheet http://../
ELECTRICAL CHARACTERISTICS(TA=25o C unless otherwise noted)
PARAMETER Breakdown voltage per diode SYMBOL VBR TEST CONDITIONS I R=0.5m A I F=1A I F=3A I F=5A I F=1A I F=3A VR=40V Reverse current per diode IR VR=50V TJ=25o C TJ=125o C TJ=25o C TJ=25o C TJ=125o C MIN. 50 TYP. 0.34 0.44 0.52 0.27 0.42 25 6 MAX. 0.57 210 UNIT V V V A A m A
Instantaneous forward voltage per diode
CJ, Junction Capacitance (p F)
IF, Forward Current (A)
6 5 4 3 2 1 Per Diode 0 0 25 50 75 100 125 150
10 Per Diode 1 1 10 100
TC, Case Temperature (°C)
VR, Reverse Bias Voltage (V)
Fig.1 Forward Current Derating Curve
100 Per Diode 10 TJ = 125°C 1 TJ = 75°C TJ = 25°C 0.01 20 40 60 80...
