PANJIT International SIC02A120S
SILICON CARBIDE SCHOTTKY DIODE
| Part No. | SIC02A120S |
|---|---|
| Datasheet | SIC02A120S Download |
| Manufacturer | PANJIT International |
| Description | SILICON CARBIDE SCHOTTKY DIODE |
| Buy | Stock & Price |
FEATURES
● Temperature Independent Switching Behavior● Low Conduction and Switching Loss
● High Surge Current Capability
● Positive Temperature Coefficient on VF
● Fast Reverse Recovery
MECHANICAL DATA
● Case: Molded plastic, TO-252AA● Marking: 02A120S Benefits
● High Frequency Operation
● Higher System Efficiency
● Environmental Protection
● Parallel Device Convenience
● Hard Switching & High Reliability
● High Temperature Application TO-252AA Unit: inch(mm)
MAXIMUM RATINGS
PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave, D=0.1) SYMBOL VRRM VRSM VR IF(AV) IFRM TEST CONDITIONS TJ=25oC TJ=25oC TJ=25oC TC=25oC TC=125oC TC=165oC TC=25oC TC=125oC VALUE 1200 1200 1200 9 5 2 19 16 UNITS V V V A A A A A June 15,2016-REV.02 Page 1 SiC02A120SMAXIMUM RATINGS
PARAMETER Non-Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave) Non-Repetitive Peak...
