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PD27025F - Lateral MOSFET

Features

  • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.

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Datasheet Details

Part number PD27025F
Manufacturer PEAK electronics GmbH
File Size 1.62 MB
Description Lateral MOSFET
Datasheet download datasheet PD27025F Datasheet

Full PDF Text Transcription

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PD27025F 25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET Introduction The PD27025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for www.DataSheet4U.com 2.5GHz - 2.7GHz Class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of deliver ing a minimum output power of 25 W, it is ideally suited for today's RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym R JC Value 2.1 Unit °C/W Table 2.
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